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SI2200
RF SYNTHESIZER WITH INTEGRATED VCOS F O R SA T E L L I T E R A D I O
Features
!
Dual-band RF synthesizers
" "
! ! ! ! ! !
RF1: 2300 to 2500 MHz RF2: 2025 to 2300 MHz 62.5 to 1000 MHz
! !
IF synthesizer
"
Integrated VCOs, loop filters, varactors, and resonators
Minimal external components required Low phase noise 5 A standby current 25.7 mA typical supply current 2.9 to 3.6 V operation 28-lead QFN
"
Ordering Information: See page 28.
Lead-Free and RoHS Compliant
Applications
!
Pin Assignments
Satellite Radio
SI2200-GM
Description
The SI2200 is a monolithic integrated circuit that performs both IF and RF synthesis for wireless communications applications. The SI2200 includes three VCOs, loop filters, reference and VCO dividers, and phase detectors. Divider and powerdown settings are programmable through a three-wire serial interface.
SDATA IFOUT SCLK VDDI GND SEN GND
28 27 26 25 24 23 22
GND GND NC
1 2 3 4 5 6 7 8
GND
21 20 19
GND IFLB IFLA GND VDDD GND XIN
Functional Block Diagram
GND NC GND
GND
18 17 16 15
XIN
Reference Amplifier Power Down Control
/1//2
/RRF1
Phase Detect RF1
GND
9
GND
10 11 12 13 14
AUXOUT PWDN RFOUT VDDR GND
PWDN
/NRF1 /RRF2
Phase Detect
/2
RFOUT
SDATA SCLK SEN
Serial Interface 22-bit Data Register
RF2
/NRF2 /RIF
Phase Detect
/2
Patents pending
IFDIV IFOUT
AUXOUT
Test Mux
IF
/NIF
IFLA IFLB
Rev. 1.0 5/05
Copyright (c) 2005 by Silicon Laboratories
SI2200
SI2200
2
Rev. 1.0
SI2200 TABLE O F CONTENTS
Section Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.1. Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.2. Setting the IF VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.3. Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.4. Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.5. PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.6. RF and IF Outputs (RFOUT and IFOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.7. Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.8. Powerdown Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.9. Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 3. Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 4. Pin Descriptions: SI2200 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27 5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6. Package Outline: SI2200-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Rev. 1.0
3
SI2200
1. Electrical Specifications
Table 1. Recommended Operating Conditions1,2
Parameter Ambient Operating Temperature Ambient Functional Temperature Supply Voltage Supply Voltages Difference Symbol TA TF VDD V (VDDR - VDDD), (VDDI - VDDD) Test Condition Min -40 -40 2.9 -0.3 Typ 25 25 3.3 -- Max 85 95 3.6 0.3 Unit C C V V
Notes: 1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 C unless otherwise stated. 2. Minimum and maximum specifications are not guaranteed across the functional temperature range.
Table 2. Absolute Maximum Ratings1,2
Parameter DC Supply Voltage Input Current3 Input Voltage3 Storage Temperature Range Symbol VDD IIN VIN TSTG Value -0.5 to 4.0 10 -0.3 to VDD+0.3 -55 to 150 Unit V mA V
oC
Notes: 1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of this device should only be done at ESD-protected workstations. 3. For signals SCLK, SDATA, SEN, PWDN, and XIN.
4
Rev. 1.0
SI2200
Table 3. DC Characteristics
(VDD = 2.7 to 3.6 V, TA = -40 to 85 C) Parameter Total Supply Current
1
Symbol
Test Condition RF1 and IF operating
Min -- -- -- --
Typ 28.7 19.5 18.5 10 1 -- -- -- -- -- --
Max 35 24 23 12 -- -- 0.3 VDD 10 10 -- 0.4
Unit mA mA mA mA A V V A A V V
RF1 Mode Supply Current1 RF2 Mode Supply Current1 IF Mode Supply Current1 Standby Current High Level Input Voltage2 Low Level Input Voltage2 High Level Input Current2 Low Level Input Current2 High Level Output Voltage3 Low Level Output Voltage3 VIH VIL IIH IIL VOH VOL VIH = 3.6 V, VDD = 3.6 V VIL = 0 V, VDD= 3.6 V IOH = -500 A IOH = 500 A PWDN = 0
-- 0.7 VDD -- -10 -10 VDD-0.4 --
Notes: 1. RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0. 2. For signals SCLK, SDATA, SEN, and PWDN. 3. For signal AUXOUT.
Rev. 1.0
5
SI2200
Table 4. Serial Interface Timing
(VDD = 2.7 to 3.6 V, TA = -40 to 85 C) Parameter1 SCLK Cycle Time SCLK Rise Time SCLK Fall Time SCLK High Time SCLK Low Time SDATA Setup Time to SCLK2 SDATA Hold Time from SCLK2 SEN to SCLK Delay Time
2
Symbol tclk tr tf th tl tsu thold ten1 ten2 ten3 tw
Test Condition Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 2 Figure 2 Figure 2 Figure 2 Figure 2 Figure 2
Min 40 -- -- 10 10 5 0 10 12 12 10
Typ -- -- -- -- -- -- -- -- -- -- --
Max -- 50 50 -- -- -- -- -- -- -- --
Unit ns ns ns ns ns ns ns ns ns ns ns
SCLK to SEN Delay Time2 SEN to SCLK Delay Time2 SEN Pulse Width
Notes: 1. All timing is referenced to the 50% level of the waveform, unless otherwise noted. 2. Timing is not referenced to the 50% level of the waveform. See Figure 2.
tr
80%
tf
SCLK
50% 20%
th
tclk
tl
Figure 1. SCLK Timing Diagram
6
Rev. 1.0
SI2200
A
A
Figure 2. Serial Interface Timing Diagram
First bit clocked in
Last bit clocked in
DDDDDDDDDDDDDDDDDDAAAA 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 3 2 1 0
data field
Figure 3. Serial Word Format
address field
Rev. 1.0
7
SI2200
Table 5. RF and IF Synthesizer Characteristics
(VDD = 2.7 to 3.6 V, TA = -40 to 85 C) Parameter1 Symbol Test Condition Min Typ Max Unit
XIN Input Frequency XIN Input Frequency Reference Amplifier Sensitivity Phase Detector Update Frequency
fREF fREF VREF f
XINDIV2 = 0 XINDIV2 = 1
2 25 0.5
-- -- -- --
25 50 VDD +0.3 V 1.0
MHz MHz VPP MHz
f = fREF/R for XINDIV2 = 0 f = fREF/2R for XINDIV2 = 1
0.010
RF1 VCO Tuning Range2 RF2 VCO Tuning Range2 IF VCO Center Frequency Range IFOUT Tuning Range from fCEN IFOUT VCO Tuning Range from fCEN RF1 VCO Pushing RF2 VCO Pushing IF VCO Pushing RF1 VCO Pulling RF2 VCO Pulling IF VCO Pulling RF1 Phase Noise RF1 Integrated Phase Error RF2 Phase Noise RF2 Integrated Phase Error IF Phase Noise at 800 MHz IF Integrated Phase Error 1 MHz offset 100 Hz to 100 kHz 1 MHz offset 100 Hz to 100 kHz 100 kHz offset 100 Hz to 100 kHz VSWR = 2:1, all phases, open loop fCEN with IFDIV Note: L 10% Open loop
2300 2025 526 62.5 -5 -- -- -- -- -- -- -- -- -- -- -- --
-- -- -- -- -- 0.75 0.65 0.10 0.250 0.100 0.025 -130 1.2 -131 1.0 -104 0.4
2500 2300 952 1000 5 -- -- -- -- -- -- -- -- -- -- -- --
MHz MHz MHz MHz % MHz/V MHz/V MHz/V MHz p-p MHz p-p MHz p-p dBc/Hz degrees rms dBc/Hz degrees rms dBc/Hz degrees rms
Notes: 1. f(RF) = 1 MHz, f(IF) = 1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0. 2. RF VCO tuning range limits are fixed by inductance of internally bonded wires. 3. From powerup request (PWDN or SEN during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF synthesizers ready (settled to within 0.1 ppm frequency error). 4. From powerdown request (PWDN, or SEN during a write of 0 to bits PDIB and PDRB in Register 2) to supply current equal to IPWDN.
8
Rev. 1.0
SI2200
Table 5. RF and IF Synthesizer Characteristics (Continued)
(VDD = 2.7 to 3.6 V, TA = -40 to 85 C) Parameter1 Symbol Test Condition Min Typ Max Unit
RF1 Harmonic Suppression RF2 Harmonic Suppression IF Harmonic Suppression RFOUT Power Level RFOUT Power Level IFOUT Power Level RF1 Output Reference Spurs
Second Harmonic
-- -- --
-28 -23 -26 -1 -1 -4 -63 -68 -70 -63 -68 -70 80 40/f --
-20 -20 -20 3 3 0 -- -- -- -- -- -- 100 50/f 100
dBc dBc dBc dBm dBm dBm dBc dBc dBc dBc dBc dBc s
ZL = 50 , RF1 active ZL = 50 , RF2 active ZL = 50 Offset = 1 MHz Offset = 2 MHz Offset = 3 MHz
-3 -3 -8 -- -- -- -- -- -- -- -- --
RF2 Output Reference Spurs
Offset = 1 MHz Offset = 2 MHz Offset = 3 MHz
Powerup Request to Synthesizer Ready3 Time Powerup Request to Synthesizer Ready3 Time Powerdown Request to Synthesizer Off4 Time
tpup tpup tpdn
Figures 4, 5 f > 500 kHz Figures 4, 5 f 500 kHz Figures 4, 5
ns
Notes: 1. f(RF) = 1 MHz, f(IF) = 1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0. 2. RF VCO tuning range limits are fixed by inductance of internally bonded wires. 3. From powerup request (PWDN or SEN during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF synthesizers ready (settled to within 0.1 ppm frequency error). 4. From powerdown request (PWDN, or SEN during a write of 0 to bits PDIB and PDRB in Register 2) to supply current equal to IPWDN.
Rev. 1.0
9
SI2200
RF synthesizers settled to within 0.1 ppm frequency error. tpup tpdn
RF synthesizers settled to within 0.1 ppm frequency error. tpup tpdn
IT IPWDN SEN
IT IPWDN PWDN
SDATA
PDIB = 1 PDRB = 1
PDIB = 0 PDRB = 0
Figure 4. Software Power Management Timing Diagram
Figure 5. Hardware Power Management Timing Diagram
10
Rev. 1.0
SI2200
Figure 6. Typical Transient Response RF1 at 2.4 GHz with 1 MHz Phase Detector Update Frequency
Rev. 1.0
11
SI2200
-60
-70
-80
Phase Noise (dBc/Hz)
-90
-100
-110
-120
-130
-140 1.E+02
1.E+03
1.E+04 Offset Frequency (Hz)
1.E+05
1.E+06
Typical RF1 Phase Noise at 2.4 GHz
Figure 7. Typical RF1 Phase Noise at 2.4 GHz with 1 MHz Phase Detector Update Frequency
Figure 8. Typical RF1 Spurious Response at 2.4 GHz with 1 MHz Phase Detector Update Frequency
12
Rev. 1.0
SI2200
-60
-70
-80
Phase Noise (dBc/Hz)
-90
-100
-110
-120
-130
-140 1.E+02
1.E+03
1.E+04 Offset Frequency (Hz)
1.E+05
1.E+06
Typical RF2 Phase Noise at 2.1 GHz
Figure 9. Typical RF2 Phase Noise at 2.1 GHz with 1 MHz Phase Detector Update Frequency
Figure 10. Typical RF2 Spurious Response at 2.1 GHz with 1 MHz Phase Detector Update Frequency
Rev. 1.0
13
SI2200
-60
-70
-80
Phase Noise (dBc/Hz)
-90
-100
-110
-120
-130
-140 1.E+02
1.E+03
1.E+04 Offset Frequency (Hz)
1.E+05
1.E+06
Typical IF Phase Noise at 800 MHz
Figure 11. Typical IF Phase Noise at 800 MHz with 1 MHz Phase Detector Update Frequency
Figure 12. IF Spurious Response at 800 MHz with 1 MHz Phase Detector Update Frequency
14
Rev. 1.0
SI2200
VDD 30 0.022F From System Controller LMATCH 560 pF IFOUT
28 27 26 25 24 23 22
SDATA
SCLK
GND
1 2 3 4 5 6 7
IFOUT
VDDI
GND
SEN
GND GND NC GND NC GND
GND IFLB IFLA
21 20 19 18
Printed Trace Inductor or Chip Inductor
SI2200
GND VDDD GND AUXOUT
VDD 0.022F
17 16
560 pF
VDDR PWDN GND GND GND RFOUT XIN GND
15
External Clock
8
9
13
10
11
12
14
0.022F
VDD
PWDN
560 pF
RFOUT *Add 30 series resistor if using IF output divide values 2, 4, or 8 and fCEN < 600 MHz.
AUXOUT
Figure 13. Typical Application Circuit: SI2200
Rev. 1.0
15
SI2200
2. Functional Description
The SI2200 is a monolithic integrated circuit that performs IF and dual-band RF synthesis for many wireless communications applications. This integrated circuit (IC), along with a minimum number of external components, is all that is necessary to implement the frequency synthesis function in applications, such as satellite radio. The SI2200 has three complete phase-locked loops (PLLs) with integrated voltage-controlled oscillators (VCOs). The low phase noise of the VCOs makes the SI2200 suitable for use in demanding wireless communications applications. Also integrated are phase detectors, loop filters, and reference and output frequency dividers. The IC is programmed through a three-wire serial interface. Two PLLs are provided for RF synthesis. These RF PLLs are multiplexed so that only one PLL is active at a given time (as determined by the setting of an internal register). The active PLL is the last one written. The center frequency of the VCO in each PLL is set by the internal bond wire inductance within the package. Inaccuracies in these inductances are compensated for by the self-tuning algorithm. The algorithm is run following power-up or following a change in the programmed output frequency. The RF PLLs contain a divide-by-2 circuit before the Ndivider. As a result, the phase detector frequency (f) is equal to half the desired channel spacing. For example, for a 200 kHz channel spacing, f would equal 100 kHz. The IF PLL does not contain the divide-by-2 circuit before the N-divider. In this case, f is equal to the desired channel spacing. Each RF VCO is optimized for a particular frequency range. The RF1 VCO is optimized to operate from 2.3 to 2.5 GHz, while the RF2 VCO is optimized to operate between 2.025 and 2.3 GHz. One PLL is provided for IF synthesis. The center frequency of this circuit's VCO is set by an external inductance. The PLL can adjust the IF output frequency by 5% of the VCO center frequency. Inaccuracies in the value of the external inductance are compensated for by the SI2200's proprietary self-tuning algorithm. This algorithm is initiated each time the PLL is poweredup (by either the PWDN pin or by software) and/or each time a new output frequency is programmed. The IF VCO can have its center frequency set as low as 526 MHz and as high as 952 MHz. An IF output divider is provided to divide down the IF output frequencies, if needed. The divider is programmable and capable of dividing by 1, 2, 4, or 8. In order to accommodate designs running at XIN frequencies greater than 25 MHz, the SI2200 includes a programmable divide-by-2 option (XINDIV2 in Register 0, D6) on the XIN input. By enabling this option, the SI2200 can accept a range of TCXO frequencies from 25 to 50 MHz. The unique PLL architecture used in the SI2200 produces settling (lock) times that are comparable in speed to fractional-N architectures without suffering the high phase noise or spurious modulation effects often associated with those designs.
2.1. Serial Interface
A timing diagram for the serial interface is shown in Figure 2 on page 7. Figure 3 on page 7 shows the format of the serial word. The SI2200 is programmed serially with 22-bit words comprised of 18-bit data fields and 4-bit address fields. When the serial interface is enabled (i.e., when SEN is low) data and address bits on the SDATA pin are clocked into an internal shift register on the rising edge of SCLK. Data in the shift register is then transferred on the rising edge of SEN into the internal data register addressed in the address field. The serial interface is disabled when SEN is high. Table 11 on page 21 summarizes the data register functions and addresses. It is not necessary (although it is permissible) to clock into the internal shift register any leading bits that are "don't cares."
2.2. Setting the IF VCO Center Frequencies
The IF PLL can adjust its output frequency 5% from the center frequency as established by the value of an external inductance connected to the VCO. The RF1 and RF2 PLLs have fixed operating ranges due to the inductance set by the internal bond wires. Each center frequency is established by the value of the total inductance (internal and/or external) connected to the respective VCO. Manufacturing tolerance of 10% for the external inductor is acceptable for the IF VCO. The SI2200 will compensate for inaccuracies by executing a self-tuning algorithm following PLL power-up or following a change in the programmed output frequency. Because the total tank inductance is in the low nH range, the inductance of the package needs to be considered in determining the correct external inductance. The total inductance (LTOT) presented to the IF VCO is the sum of the external inductance (LEXT) and the package inductance (LPKG). The IF VCO has a nominal capacitance (CNOM) in parallel with the total inductance, and the center frequency is as follows:
16
Rev. 1.0
SI2200
1 1 f CEN = ---------------------------------------------- = -----------------------------------------------------------------------2 L TOT x C NOM 2 ( L PKG + L EXT ) x C NOM
2.3. Self-Tuning Algorithm
The self-tuning algorithm is initiated immediately following power-up of a PLL or, if the PLL is already powered, following a change in its programmed output frequency. This algorithm attempts to tune the VCO so that its free-running frequency is near the desired output frequency. In so doing, the algorithm will compensate for manufacturing tolerance errors in the value of the external inductance connected to the IF VCO. It will also reduce the frequency error for which the PLL must correct to get the precise desired output frequency. The self-tuning algorithm will leave the VCO oscillating at a frequency in error by somewhat less than 1% of the desired output frequency. After self-tuning, the PLL controls the VCO oscillation frequency. The PLL will complete frequency locking, eliminating any remaining frequency error. Thereafter, it will maintain frequency-lock, compensating for effects caused by temperature and supply voltage variations. The SI2200's self-tuning algorithm will compensate for component value errors at any temperature within the specified temperature range. However, the ability of the PLL to compensate for drift in component values that occur after self-tuning is limited. For external inductances with temperature coefficients around 150 ppm/C, the PLL will be able to maintain lock for changes in temperature of approximately 30 C. Applications where the PLL is regularly powered-down or the frequency is periodically reprogrammed minimize or eliminate the potential effects of temperature drift because the VCO is re-tuned in either case. In applications where the ambient temperature can drift substantially after self-tuning, it may be necessary to monitor the lock-detect bar (LDETB) signal on the AUXOUT pin to determine whether a PLL is about to run out of locking capability. (See "Auxiliary Output (AUXOUT)" for how to select LDETB.) The LDETB signal will be low after self-tuning has completed but will rise when either the IF or RF PLL nears the limit of its compensation range. (LDETB will also be high when either PLL is executing the self-tuning algorithm.) The output frequency will still be locked when LDETB goes high, but the PLL will eventually lose lock if the temperature continues to drift in the same direction. Therefore, if LDETB goes high both the IF and RF PLLs should promptly be retuned by initiating the self-tuning algorithm.
Table 6 summarizes the characteristics of the IF VCO.
Table 6. SI2200-GM VCO Characteristics
FCEN Range (MHz) Min IF 526 Max 952 6.5 2.1 LEXT Range (nH) Min 2.2 Max 12.0
VCO
CNOM LPKG (pF) (nH)
Si4136XM
LPKG 2 LEXT IFLA
LPKG 2
IFLB
Figure 14. Example of IF External Inductor
As a design example, suppose synthesizing frequencies in a 30 MHz band between 735 and 765 MHz is desired. The center frequency should be defined as midway between the two extremes, or 750 MHz. The PLL will be able to adjust the VCO output frequency 5% of the center frequency, or 37.5 MHz of 750 MHz (i.e., from approximately 713 to 788 MHz). The IF VCO has a CNOM of 6.5 pF, and a 6.9 nH inductance (correct to two digits) in parallel with this capacitance will yield the desired center frequency. An external inductance of 4.8 nH should be connected between IFLA and IFLB, as shown in Figure 14. This, in addition to 2.1 nH of package inductance, will present the correct total inductance to the VCO. In manufacturing, the external inductance can vary 10% of its nominal value, and the SI2200 will correct for the variation with the self-tuning algorithm. For more information on designing the external trace inductor, please refer to "AN31: Inductor Design for the Si41xx Synthesizer Family".
Rev. 1.0
17
SI2200
2.4. Output Frequencies
The IF and RF output frequencies are set by programming the R- and N-Divider registers. Each PLL has its own R and N registers so that each can be programmed independently. Programming either the Ror N-Divider register for RF1 or RF2 automatically selects the associated output. When XINDIV2 = 0, the reference frequency on the XIN pin is divided by R, and this signal is the input to the PLL's phase detector. The other input to the phase detector is the PLL's VCO output frequency divided by 2N for the RF PLLs or N for the IF PLL. After an initial transient:
Table 7. Gain Values (Register 1)
KP Bits Relative P.D. Gain
10 11
1/4 1/8
In general, a higher phase detector gain will decrease in-band phase noise and increase the speed of the PLL transient until the point at which stability begins to be compromised. The optimal gain depends on N. Table 8 lists recommended settings for different values of N.
Equation 1. fOUT = (2N/R) " fREF (for the RF PLLs) Equation 2. fOUT = (N/R) " fREF (for the IF PLL).
The integers R are set by programming the RF1 RDivider register (Register 6), the RF2 R-Divider register (Register 7) and the IF R-Divider register (Register 8). The integers N are set by programming the RF1 NDivider register (register 3), the RF2 N-Divider register (Register 4), and the IF N-Divider register (Register 5). If the optional divide-by-2 circuit on the XIN pin is enabled (XINDIV2 = 1), after an initial transient: fOUT = (N/R) " fREF (for the RF PLLs) fOUT = (N/2R) " fREF (for the IF PLL). Each N-Divider is implemented as a conventional highspeed divider. That is, it consists of a dual-modulus prescaler, a swallow counter, and a lower speed synchronous counter. However, the control of these sub-circuits is handled automatically. Only the appropriate N value should be programmed.
N
Table 8. Optimal KP Settings
RF1 KP1<1:0> RF2 KP2<1:0> IF KPI<1:0>
2047
00 00 01 10 11
00 01 10 11 11
00 01 10 11 11
2048 to 4095 4096 to 8191 8192 to 16383
16384
The VCO gain and loop filter characteristics are not programmable. The settling time for each PLL is directly proportional to its phase detector update period T (T equals 1/f). During the first 13 update periods, the SI2200 executes the self-tuning algorithm. Thereafter, the PLL controls the output frequency. Because of the unique architecture of the SI2200 PLLs, the time required to settle the output frequency to 0.1 ppm error is only about 25 update periods. Thus, the total time after power-up or a change in programmed frequency until the synthesized frequency is well settled--including time for self-tuning--is around 40 update periods.
Note: This settling time analysis holds for f 500 kHz. For f > 500 kHz, the settling time can be a maximum of 100 s as specified in Table 5.
2.5. PLL Loop Dynamics
The transient response for each PLL is determined by its phase detector update rate f (equal to fREF/R) and the phase detector gain programmed for each RF1, RF2, or IF synthesizer. (See Register 1.) Four different settings for the phase detector gain are available for each PLL. The highest gain is programmed by setting the two phase detector gain bits to 00 and the lowest by setting the bits to 11. The values of the available gains, relative to the highest gain, are listed in Table 7.
2.6. RF and IF Outputs (RFOUT and IFOUT)
The RFOUT and IFOUT pins are driven by amplifiers that buffer the RF VCOs and IF VCO, respectively. The RF output amplifier receives its input from either the RF1 or RF2 VCO, depending upon which R- or NDivider register was last written. For example, programming the N-Divider register for RF1 automatically selects the RF1 VCO output.
Table 7. Gain Values (Register 1)
KP Bits Relative P.D. Gain
00 01
1 1/2
18
Rev. 1.0
SI2200
Figure 13 on page 15 shows an application diagram for the SI2200. The RF output signal must be ac-coupled to its load through a capacitor. The IFOUT pin must also be ac-coupled to its load through a capacitor. The IF output level is dependent upon the load. Figure 17 displays the output level versus load resistance. For resistive loads greater than 500 , the output level saturates, and the bias currents in the IF output amplifier are higher than they need to be. The LPWR bit in the Main Configuration register (Register 0) can be set to 1 to reduce the bias currents and, therefore, reduce the power dissipated by the IF amplifier. For loads less than 500 , LPWR should be set to 0 to maximize the output level. For IF frequencies greater than 500 MHz, a matching network is required in order to drive a 50 load. See Figure 15 below. The value of LMATCH can be determined by Table 9. Typical values range between 8 nH and 40 nH.
>500 pF
450
400
350 LPWR=1 LPWR=0 300 Output Voltage (mVrms)
250
200
150
100
50
0 0 200 400 600 Load Resistance () 800 1000 1200
Figure 17. Typical IF Output Voltage vs. Load Resistance at 550 MHz
2.7. Reference Frequency Amplifier
The SI2200 provides a reference frequency amplifier. If the driving signal has CMOS levels, it can be connected directly to the XIN pin. Otherwise, the reference frequency signal should be ac coupled to the XIN pin through a 560 pF capacitor.
IFO UT
L MATCH 50
2.8. Powerdown Modes
Table 10 summarizes the powerdown functionality. The SI2200 can be powered down by taking the PWDN pin low or by setting bits in the Powerdown register (Register 2). When the PWDN pin is low, the SI2200 will be powered down regardless of the Powerdown register settings. When the PWDN pin is high, power management is under control of the Powerdown register bits. The IF and RF sections of the SI2200 circuitry can be individually powered down by setting the Powerdown register bits, PDIB and PDRB, low. The reference frequency amplifier will also be powered up if either the PDRB or PDIB bits are high. Also, setting the AUTOPDB bit to 1 in the Main Configuration register (Register 0) is equivalent to setting both bits in the Powerdown register to 1. The serial interface remains available and can be written in all power-down modes.
Figure 15. IF Frequencies > 500 MHz Table 9. LMATCH Values
Frequency LMATCH
500-600 MHz 600-800 MHz 800-1 GHz
40 nH 27 nH 18 nH
For frequencies less than 500 MHz, the IF output buffer can directly drive a 200 resistive load or higher. For resistive loads greater than 500 (f < 500 MHz) the LPWR bit can be set to reduce the power consumed by the IF output buffer. See Figure 16 below.
>500 pF
2.9. Auxiliary Output (AUXOUT)
The signal appearing on AUXOUT is selected by setting the AUXSEL bits in the Main Configuration register (Register 0).
>200
IFO UT
Figure 16. IF Frequencies < 500 MHz
The LDETB signal can be selected by setting the AUXSEL bits to 011. This signal can be used to indicate that the IF or RF PLL is about to lose lock due to excessive ambient temperature drift and should be retuned.
Rev. 1.0
19
SI2200
Table 10. Powerdown Configuration
PWDN Pin AUTOPDB PDIB PDRB IF Circuitry RF Circuitry
PWDN = 0
x 0 0
x 0 0 1 1 x
x 0 1 0 1 x
OFF OFF OFF ON ON ON
OFF OFF ON OFF ON ON
PWDN = 1
0 0 1
Note: x = don't care.
20
Rev. 1.0
SI2200
3. Control Registers
Table 11. Register Summary
Register Name Bit Bit Bit Bit 17 16 15 14 Bit 13 Bit 12 Bit 11 Bit Bit Bit Bit 10 9 8 7 Bit 6 Bit 5 Bit 4 Bit 3
AUTO PDB
Bit 2
Bit 1
Bit 0
0 1
Main Configuration Phase Detector Gain Powerdown RF1 N Divider RF2 N Divider IF N Divider RF1 R Divider RF2 R Divider IF R Divider Reserved
0 0
0 0
0 0
0 0
AUXSEL
IFDIV 0 0
1 0
1 0
0 0
XIN LPWR DIV2
0
0
1 KP1
0
0
0
0
KPI
KP2
2 3 4 5 6 7 8 9
. . .
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
PDIB
PDRB
NRF1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 NRF2 NIF RRF1 RRF2 RIF
15
Reserved
Note: Registers 9-15 are reserved. Writes to these registers may result in unpredictable behavior.
Rev. 1.0
21
SI2200
Register 0. Main Configuration Address Field = A[3:0] = 0000 Bit Name D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5
LPWR
D4
D3
AUTO PDB
D2
D1
D0
0
0
0
0
AUXSEL
IFDIV
1
1
0
XIN DIV2
0
0
1
0
Bit
Name
Function
17:14 13:12
Reserved AUXSEL
Program to zero.
Auxiliary Output Pin Definition. 00 = Reserved. 01 = Force output low. 11 = Lock Detect (LDETB). IF Output Divider 00 = IFOUT = IFVCO Frequency 01 = IFOUT = IFVCO Frequency/2 10 = IFOUT = IFVCO Frequency/4 11 = IFOUT = IFVCO Frequency/8
11:10
IFDIV
9:7 6
Reserved XINDIV2
Program to 110.
XIN Divide-By-2 Mode. 0 = XIN not divided by 2. 1 = XIN divided by 2. Output Power-Level Settings for IF Synthesizer Circuit. 0 = RLOAD < 500 --normal power mode. 1 = RLOAD 500 --low power mode.
5
LPWR
4 3
Reserved AUTOPDB
Program to zero.
Auto Powerdown 0 = Software powerdown is controlled by Register 2. 1 = Equivalent to setting all bits in Register 2 = 1.
2 1 0
Reserved Reserved Reserved
Program to zero. Program to one. Program to zero.
22
Rev. 1.0
SI2200
Register 1. Phase Detector Gain Address Field (A[3:0]) = 0001 Bit Name Bit D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
0
0
0
0
0
0
0
0
0
0
0
0
Function
KPI
KP2
KP1
Name
17:6 5:4
Reserved KPI
Program to zero.
IF Phase Detector Gain Constant. N Value KPI <2048 00 2048-4095 01 4096-8191 10 >8191 11 RF2 Phase Detector Gain Constant. N Value KP2 <2048 00 2048-4095 01 4096-8191 10 >8191 11 RF1 Phase Detector Gain Constant. N Value KP1 <4096 00 4096-8191 01 8192-16383 10 >16383 11
3:2
KP2
1:0
KP1
Rev. 1.0
23
SI2200
Register 2. Powerdown Address Field (A[3:0]) = 0010 Bit Name Bit D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
0
0
0
0
Name
0
0
0
0
0
0
0
0
0
0
0
0
PDIB PDRB
Function
17:2 1
Reserved PDIB
Program to zero.
Powerdown IF Synthesizer. 0 = IF synthesizer powered down. 1 = IF synthesizer on. Powerdown RF Synthesizer. 0 = RF synthesizer powered down. 1 = RF synthesizer on.
0
PDRB
Register 3. RF1 N Divider Address Field (A[3:0]) = 0011 Bit Name Bit Name D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
NRF1
Function N Divider for RF1 Synthesizer. NRF1 992.
17:0
NRF1
Register 4. RF2 N Divider Address Field = A[3:0] = 0100 Bit Name Bit D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
0
Name
NRF2
Function
17 16:0
Reserved NRF2
Program to zero.
N Divider for RF2 Synthesizer. NRF2 240.
24
Rev. 1.0
SI2200
Register 5. IF N Divider Address Field (A[3:0]) = 0101 Bit Name Bit D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
0
0
Name
NIF
Function
17:16 15:0
Reserved NIF
Program to zero.
N Divider for IF Synthesizer. NIF 56.
Register 6. RF1 R Divider Address Field (A[3:0]) = 0110 Bit Name D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
0
0
0
Name
0
0
RRF1
Function
17:13 12:0
Reserved RRF1
Program to zero.
R Divider for RF1 Synthesizer. RRF1 can be any value from 7 to 8189 if KP1 = 00 8 to 8189 if KP1 = 01 10 to 8189 if KP1 = 10 14 to 8189 if KP1 = 11
Register 7. RF2 R Divider Address Field (A[3:0]) = 0111 Bit Name Bit D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
0
0
0
Name
0
0
RRF2
Function
17:13 12:0
Reserved RRF2
Program to zero.
R Divider for RF2 Synthesizer. RRF2 can be any value from 7 to 8189 if KP2 = 00 8 to 8189 if KP2 = 01 10 to 8189 if KP2 = 10 14 to 8189 if KP2 = 11
Rev. 1.0
25
SI2200
Register 8. IF R Divider Address Field (A[3:0]) = 1000 Bit Name Bit D17 D16 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
0
0
0
Name
0
0
RIF
Function
17:13 12:0
Reserved RIF
Program to zero.
R Divider for IF Synthesizer. RIF can be any value from 7 to 8189 if KP1 = 00 8 to 8189 if KP1 = 01 10 to 8189 if KP1 = 10 14 to 8189 if KP1 = 11
26
Rev. 1.0
SI2200
4. Pin Descriptions: SI2200
SDATA IFOUT SCLK VDDI GND SEN GND
28 27 26 25 24 23 22
GND GND NC GND NC GND GND
1 2 3 4 5 6 7 8
GND
21 20 19
GND IFLB IFLA GND VDDD GND XIN
GND
18 17 16 15
9
GND
10 11 12 13 14
AUXOUT PWDN RFOUT VDDR GND
Pin Number(s)
Name
Description
1, 2, 4, 6, 7-9, 14, GND 16, 18, 21, 22, 28 3, 5 10 11 12 13 15 17 19, 20 23 24 25 26 27 NC RFOUT VDDR AUXOUT PWDN XIN VDDD IFLA, IFLB IFOUT VDDI SEN SCLK SDATA
Common ground No connect Radio frequency (RF) output of the selected RF VCO Supply voltage for the RF analog circuitry Auxiliary output Powerdown input pin Reference frequency amplifier input Supply voltage for digital circuitry Pins for inductor connection to IF VCO Intermediate frequency (IF) output of the IF VCO Supply voltage for IF analog circuitry Enable serial port input Serial clock input Serial data input
Rev. 1.0
27
SI2200
5. Ordering Guide
Ordering Part Number Description Temp. Range
SI2200-X-GM
2.5 GHz/2.3 GHz/IF OUT, Lead-free, QFN
-40 to 85 oC
Notes: 1. Add an "R" at the end of the device to denote tape and reel option; 2500 quantity per reel. 2. "X" denotes product revision.
28
Rev. 1.0
SI2200
6. Package Outline: SI2200-GM
Figure 18 illustrates the package details for the SI2200-GM. Table 12 lists the values for the dimensions shown in the illustration.
Figure 18. 28-Pin Quad Flat No-Lead (QFN) Table 12. SI2200-GM Package Diagram Dimensions
Dimension Min. Nom. Max.
A A1 b D D2 e E E2 L Q aaa bbb ccc ddd
0.80 0.00 0.18 2.55
0.85 0.01 0.23 5.00 BSC. 2.70 0.50 BSC. 5.00 BSC.
0.90 0.05 0.30 2.85
2.55 0.50 -- -- -- -- --
2.70 0.60 -- -- -- -- --
2.85 0.70 12 0.10 0.10 0.05 0.10
Rev. 1.0
29
SI2200
CONTACT INFORMATION
Silicon Laboratories Inc.
4635 Boston Lane Austin, TX 78735 Tel: 1+(512) 416-8500 Fax: 1+(512) 416-9669 Toll Free: 1+(877) 444-3032 Email: SDARSinfo@silabs.com Internet: www.silabs.com
The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice. Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where personal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages. Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc. Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.
30
Rev. 1.0

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